Vapor-liquid solid mechanism using gold colloids for the growth of GaAs nanowires
Keywords:Vapor-liquid solid mechanism, GaAs, Nanowire, MOCVD,
AbstractGaAs nanowires were grown on the semi insulating undoped GaAs (111)B wafer by using metal organic chemical vapor deposition, MOCVD. The growth follows the vapor-liquid-solid method by applying nanoparticle gold colloid as a catalyst to forms a eutectic liquid alloy with the wafer substrate. The GaAs wafer were first dipped in the poly-L-lysine solution before 30nm gold colloid dropped on the wafer surface. The temperature growth was set at 420 ºC and the growth processes were done between 10 to 60 min. The samples structural were characterized using field emmission scanning electron microscope, FE-SEM and shows the GaAs nanowires height increased with the increasing growth time. On the top of each wire contain ball which include some quantity of Au when anlyze using energy disperve x-ray spectroscopy, EDX.
Lars Samuelson, 2003, “Self-forming nanoscale devices“, Materials today, p22.
R. S. Wagner and W. C. Ellis, 1964, “Vapor-liquid solid mechanism of single crystal growth” Applied Physics Letter, Vol 4, No 5, p 89
K. Hiruma, M. Yazawa, T. Katsuyama, K. Ogawa, K. Haraguchi, M. Koguchi and H. Kakibayashi, 1995, “Growth and optical properties of nanometer-scale GaAs and InAs whiskers”, Journal of Applied Physics,
Vol 77 (2), p 447.
M. C. Plante and R. R. LaPierre, 2008, “Au-assisted growth of GaAs nanowires by gas source molecular beam epitaxy : Tapering, sidewall faceting and crystal structure”, Journal of Crystal Growth, Vol 310, p
Q. X. Zhao, M. Willander, R. E. Morjan, Q-H. Hu and E.E. B. Campbell, 2003, “Optical recombination of ZnO nanowires grown on sapphire and Si substrates”, Applied Physics Letter, Vol 83, no 1, p 165.
Yi Cui, Lincoln J. Lauhom, Mark S. Gudiksen, Jianfang Wang and Charles M. Lieber, 2001, Diametercontrolled synthesis of single-crystal silicon nanowires”, Applied Physics Letter, 78, no 15, p 2214.
M. T. Bjork, B. J. Ohlsson, C. Thelander, A. I. Persson, K. Deppert, L. R. Wallenberg, L. Samuelson, 2002, Applied Physics Letter, 81, p 4458.
L. J. Lauhon, Mark S. Gudiksen and Charles M. Lieber, 2004, “Semiconductor nanowire heterostructure”, Phil. Trans. R. Soc. Lond, A, 362, p 1247-1260.
M. R. Brozel and G. E. Stillman, 1996, Properties of Gallium Arsenide, 3rd edition, Inspec, London, UK.
H. H. Tan, K. Sears, S. Mokkapati, Lan Fu, Yong Kim, P. McGowan, M Buda and C. Jagadish, 2006, “QD and Nanowires grown by MOCVD for optoelectronic device applications”, IEEE Journal of selected topics
in quantum electronics, Vol 12, No 6, p 1242.