Aluminum Doped Titanium Dioxide Thin Film for Perovskite Electron Transport Layer

Authors

  • Faiz Hashim Department of Physic, Faculty of Science; 81310 UTM Johor Bahru, Johor, Malaysia
  • Khamim Ismail Department of Physic, Faculty of Science; 81310 UTM Johor Bahru, Johor, Malaysia
  • Aizuddin Supee Department of Energy Engineering, School of Chemical and Energy Engineering; 81310 UTM Johor Bahru, Johor, Malaysia
  • Firdaus Omar Department of Physic, Faculty of Science; 81310 UTM Johor Bahru, Johor, Malaysia
  • Zainatul Izzah Ab. Ghani Department of Physic, Faculty of Science; 81310 UTM Johor Bahru, Johor, Malaysia
  • Ain Ajeerah Ramli Department of Physic, Faculty of Science; 81310 UTM Johor Bahru, Johor, Malaysia
  • Syariffah Nurathirah Syed Yaacob Department of Physic, Faculty of Science; 81310 UTM Johor Bahru, Johor, Malaysia

DOI:

https://doi.org/10.11113/mjfas.v18n5.2555

Keywords:

Titanium Dioxide, Aluminum, Thin Film, Perovskite Solar Cell, Electron Transport

Abstract

Aluminum (Al) doped titanium dioxide thin film with different Al doping concentration (Al = 0 mol%, 1 mol%, 3 mol%, 5 mol% and 7 mol%) were deposited using solution spin coating technique and the effect of Al concentration on the structural, morphological and optical properties were examine. All samples were annealed at 450°C for 1 hour. XRD reveal that the films exhibits anatase crystal phase at (101) peak orientation. Based on the FESEM and AFM image it is found that, surface morphology of the film was significantly affected with different doping concentration. Al doped titanium dioxide with 3 mol% Al concentration shows the highest transmittance compared to others samples. Consequently, it is shown that different Al doping concentration plays vital roles in producing an optimum Al doped titanium dioxide thin films samples.

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Published

15-12-2022