Hydrothermally Synthesized Cadmium Selenide Quantum Dot for Solar Cell Application

Ubani Charles Ahamefula, Mohamad Yusof Sulaiman, Zahari Ibarahim, Noor baaya Ibarahim, Muhammad Yusof Othman


Hydrothermal synthesis autoclave reactor offers simple, safer and environmentally friendlier process for the preparation of valuable nanoparticles. In this study, cadmium selenide (CdSe) quantum dot (QD) were successfully synthesized via one-step hydrothermal synthetic route at 195 oC. The reactant mixtures used for the synthesis was added into Teflon and comprises 15 mg of selenium (Se) powder, 15 mg of cadmium oxide (CdO), 20 ml of octadecene (OTD), 10 ml of oleic acid (OA) and 1 ml of trioctylphosphine (TOP). The synthesis lasted for 3 hours 20 minutes. The synthesized CdSe QDs were characterized using optical absorption spectroscopy, fluorescence spectroscopy (PL), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM), field emission scanning electron microscopy (FESEM) and energy dispersive X-ray analysis (EDAX). The broad absorption peak of the sample depicted the suitability of the sample for photovoltaic application while the fluorescence peaks was assigned to band edge emission to shallow and deep trap states. AFM and SEM microstructure images revealed the surface morphology and the crystal orientation of CdSe QD while the QD size and particles distribution were obtained using TEM and FESEM. The EDX were used to obtain the compositional ratio of the materials in the synthesized CdSe QD sample. The formation mechanisms were discussed on the basis of the experimental results and the quantum dots were found to be stable for about three months.


Hydrothermal synthesis; Cadmium selenide; Surface morphology; Photoluminescence; Solar cell;

Full Text:



K. Byrappa and M. Yoshimura: Handbook of Hydrothermal Technology (Noyes Publications/William Andrew Publishing LLC, U.S.A. 2001).

R. Roy: J. Solid State Chem. Vol. 111 (1994), p. 11.

S. Sômiya: Hydrothermal Reactions for Materials Science and Engineering. An Overview of Research in Japan (Elsevier Science Publishers Ltd., U.K. 1989).

M. Yoshimura, W. L. Suchanek, and K. Byrappa: MRS Bull. Vol. 25 (2000), p. 17.

B. Gersten, M. Lencka and R. E. Riman: Chem. Mater. Vol. 14 (2002), p. 1950.

R. E. Riman: in High Performance Ceramics: Surface Chemistry in Processing Technology, edited by R. Pugh and L. Bergström (Marcel-Dekker, U.S.A. 1993), p. 29.

U. C. Ahamefula, M. Y. Sulaiman, Z. Ibarahim, N. B. Ibrahim and M. Y. Othman: J. Mod. Edu. Rev. Vol. 1, No. 1, (2011) pp. 1-11

W. J. Dawson: Ceram. Bull. Vol. 67 (1988), p. 1673.

G. C. Ulmer and H. L. Barnes: Hydrothermal Experimental Techniques (Wiley-Interscience, U.S.A. 1987).

I. Sunagawa, K. Tsukamoto, K. Maiwa, and K. Onuma: Prog. Crystal Growth and Charact. Vol. 30 (1995), p. 153.

R. E. Riman, W. L. Suchanek, and M. M. Lencka: Ann. Chim. Sci. Mat. Vol. 27 (2002) p. 15.

W. L. Suchanek, M. M. Lencka, and R. E. Riman: in Aqueous Systems at Elevated Temperatures and Pressures: Physical Chemistry in Water, Steam, and Hydrothermal Solutions, edited by D. A. Palmer, R. Fernández-Prini, and A. H. Harvey (Elsevier Ltd. 2004), p. 717.

W. L. Suchanek, M.M. Lencka, L. E. McCandlish, R. L. Pfeffer, M. Oledzka, K. Mikulka-Bolen, G. A. Rossetti, Jr. and R. E. Riman: Crystal Growth & Design Vol. 5 (2005), p. 1715.

S.-B. Cho, M. Oledzka, and R. Riman: J. Crystal Growth Vol. 226 (2001), p. 313.

R. E. Riman, W. L. Suchanek, K. Byrappa, C. S. Oakes, C.-W. Chen, and P. Shuk: Solid State Ionics Vol. 151 (2002), p. 393.

W. Suchanek, H. Suda, M. Yashima, M. Kakihana, and M. Yoshimura: J. Mater. Res.Vol. 10. (1995), p. 521.

DOI: https://doi.org/10.11113/mjfas.v8n3.139


  • There are currently no refbacks.

Copyright (c) 2014 Ubani Charles Ahamefula, Mohamad Yusof Sulaiman, Zahari Ibarahim, Noor baaya Ibarahim, Muhammad Yusof Othman

Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 International License.

Copyright © 2005-2019 Penerbit UTM Press, Universiti Teknologi Malaysia. Disclaimer: This website has been updated to the best of our knowledge to be accurate. However, Universiti Teknologi Malaysia shall not be liable for any loss or damage caused by the usage of any information obtained from this website.