Design and characterization of a 10 nm finfet
DOI:
https://doi.org/10.11113/mjfas.v15n4.1234Keywords:
Drive current, feature size, FinFET, leakage current, saturation currentAbstract
This paper presents the design, characterization, and analysis of a 10 nm silicon negative channel FinFET. To validate the design, we have simulated the output characteristics and transfer characteristics of the transistor. Both of which comply with the standard characteristics of an operational MOSFET. Owing to its efficacy in suppressing short channel effects, the leakage current of the tri-gate transistor is found to be low; whereas, the drive current is sufficiently high. We have also presented the design specifications of the transistor.
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